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BLV910

NXP
Part Number BLV910
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification 1995 Apr 11 Philips Semiconductor...
Datasheet PDF File BLV910 PDF File

BLV910
BLV910

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification 1995 Apr 11 Philips Semiconductors Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain and easy design of wideband circuits • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
APPLICATIONS • Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage BLV910 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.
The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.
All leads ...


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