BLV57

DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor Product specification Supersedes data of August 1986 1998 Feb 09 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES internally matched input for wideband operation and high power gain internal midpoint (r.f. ground) reduces negative feedback and improves power gain increased input and output impedances (compared with single-ended transistors) simplify wideband matching length of the external emitter leads is not critical diffused emitter ballasting resistors for an optimum temperature profile gold metallization ensures excellent reliability. DESCRIPTION handbook, halfpage BLV57 PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 SYMBOL e e c2 b2 c1 b1 e e emitter emitter collector 2 base 2 collector 1 base 1 emitter emitter DESCRIPTION Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers. The package is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange. 1 3 5 7 2 4 6 8 Top view MBC826 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-AB Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. 2. Power gain compression is 1 dB. ...