BLV20

DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 2 3 MSB057 MBB012 BLV20 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 28 f MHz 175 PL W 8 Gp dB > 12 η % > 65 zi Ω 1,8 + j0,7 YL mS 18 − j20 PIN CONFIGURATION halfpage 1 4 c handbook, halfpage b e Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage ...