BLV10

DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8” flange envelope with a ceramic cap. All leads are isolated from the flange. BLV10 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W 8 8 > GP dB 9,0 > typ. 10,5 η % 70 typ. 75 zi Ω 2,8 + j1,2 − YL mS 76 − j16 − PIN CONFIGURATION handbook, halfpage PINNING PIN 1 1 4 DESCRIPTION collector emitter base emitter 2 3 4 2 3 MSB057 Fig.1 Simplified outline, SOT123. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz...