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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLL1214-250 L-band radar LDMOS transistor
Product specification Supersedes data of 2002 Aug 06 2003 Aug 29
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
Top view
handbook, halfpage
BLL1214-250
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
2
3
MBK394
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 150 PL (W) 250 Gp (dB) >12 ηD (%) >42 pulse droop (dB) <0.6 tr (ns) <100 tf (ns) <100
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Th ≤ 70 °C; tp = 1 ms; δ = 10% CONDITIONS − − − −65 − MIN. MAX. 75 ±22 400 150 200 V V W °C °C UNIT
2003 Aug 29
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Philips Semiconductors
Product specification
L-band radar LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-h Zth j-h Notes 1. Thermal resistance is determined under RF operating conditions; tp = 100 µs, δ = 10%. 2. Thermal resistance is determined under RF operating conditions; tp = 1 ms, δ = 10%. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MIN. 75 4 − 45 − − − PARAMETER thermal impedance from junction to heatsink thermal impedance from junction to heatsink CONDITIONS Th = 25 °C, note 1 Th = 25 °C, note 2
BLL1214-250
VALUE 0.17 0.32
UNIT K/W K/W
TYP. − − − − − 9 60
MAX. − 5 1 − 1 − −
UNIT V V µA A µA S mΩ
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Zth mb-h = 0.25 K/W, unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 150 PL (W) 250 Gp (dB) >12 ηD (%) >42 pulse droop (dB) <0.6 tr (ns) <100 tf (ns) <100
Ruggedness in class-AB operation The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power. Typical impedance FREQUENCY (GHZ) 1.20 1.25 1.30 1.35 1.40 ZS (Ω) 1.3 − j 2.8 1.9 − j 2.9 4.6 − j 2.9 5.7 − j 0.3 2.7 − j 1.8 ZL (Ω) 1.1 − j 0.9 1.0 − j 0.5 0.8 − j 0.2 0.7 − j 0.3 0.6 − j 0.4
2003 Aug 29
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Philips Semiconductors
Product specification
L-band radar LDMOS transistor
BLL1214-250
handbook, halfpage
300
MLD858
handbook, halfpage
300
MLD859
PL (W) 200
PL (W) 200
(3)
(3) (2)
100
(1)
100
(1)
(2)
0 0 4 8 12 Pi (W) 16
0 0 4 8 12 Pi (W) 16
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%.
(3) f = 1.4 GHz.
Fig.2
Load power as function of input power; typical values.
Fig.3
Load power as function of input power; typical values.
handbook, halfpage
16
MLD860
Gp (dB)
(2)
(3)
handbook, halfpage
16
MLD861
Gp (dB) 12
(2)
(3)
(1)
(1)
12
8
8
4
4
0 0 100 200 PL (W) 300
0 0 100 200 PL (W) 300
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%.
(3) f = 1.4 GHz.
Fig.4
Power gain as function of load power; typical values.
Fig.5
Power gain as function of load power; typical values.
2003 Aug 29
4
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
BLL1214-250
handbook, halfpage
(1)
60
MLD862
handbook, halfpage
60
MLD863
ηD (%) 40
(2) (3)
ηD (%) 40
(1) (2) (3)
20
20
0 0 100 200 PL (W) 300
0 0 100 200 PL (W) 300
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 1 ms; δ = 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. tp = 100 µs; δ = 10%.
(3) f = 1.4 GHz.
Fig.6
Efficiency as function of load power; typical values.
Fig.7
Efficiency as function of load p.