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BLF522 Dataheets PDF



Part Number BLF522
Manufacturers NXP
Logo NXP
Description UHF power MOS transistor
Datasheet BLF522 DatasheetBLF522 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The tra.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials 1 3 5 2 4 6 g MBB072 BLF522 PIN CONFIGURATION halfpage d s Top view MBA931 - 1 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 PL (W) 5 GP (dB) > 10 ηD (%) > 50 September 1992 2 Philips Semiconductors Product specification UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Ti PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS − − − − −65 − MIN. BLF522 MAX. 40 20 1.8 20 150 200 UNIT V V A W °C °C THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 20 W Tmb = 25 °C; Ptot = 20 W THERMAL RESISTANCE 8.8 K/W 0.4 K/W handbook, halfpage 5 MRA990 handbook, P halfpage 35 30 25 MRA427 ID (A) tot (W) (1) (2) (2) 1 20 (1) 15 10 5 0.1 0 0 1 10 VDS (V) 100 20 40 60 80 100 120 Th (oC) (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power/temperature derating curves. September 1992 3 Philips Semiconductors Product specification UHF power MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 12.5 V ±VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 0.7 A; VDS = 10 V ID = 0.7 A; VGS = 15 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz MIN. 40 − − 2 200 − − − − − BLF522 TYP. MAX. UNIT − − − − 270 1.8 2.3 14 17 3 − 0.5 1 4.5 − 2.7 − − − − V mA µA V mS Ω A pF pF pF handbook, halfpage 25 MRA254 handbook, halfpage 3 MRA249 T.C. (mV/K) ID (A) 2 15 5 1 −5 10 0 102 103 ID(mA) 104 0 4 8 12 16 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. Fig.5 Drain current as a function of gate-source voltage, typical values. September 1992 4 Philips Semiconductors Product specification UHF power MOS transistor BLF522 handbook, halfpage 5 MRA253 MRA246 RDSon (Ω) 4 handbook, halfpage 50 C (pF) 40 3 30 2 20 Cos 1 10 Cis 0 0 50 100 Tj (oC) 150 0 0 4 8 12 VDS (V) 16 ID = 0.7 A; VGS = 15 V; VGS = 0; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. handbook, halfpage 10 MRA256 Crs (pF) 8 6 4 2 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 5 Philips Semiconductors Product specification UHF power MOS transistor APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 IDQ (mA) 50 PL (W) 5 Gp (dB) > 10 typ. 11 BLF522 ηD (%) > 50 typ..


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