Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF522 UHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials
1 3 5 2 4 6 g
MBB072
BLF522
PIN CONFIGURATION
halfpage
d
s
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 PL (W) 5 GP (dB) > 10 ηD (%) > 50
September 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Ti PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS − − − − −65 − MIN.
BLF522
MAX. 40 20 1.8 20 150 200
UNIT V V A W °C °C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 20 W Tmb = 25 °C; Ptot = 20 W THERMAL RESISTANCE 8.8 K/W 0.4 K/W
handbook, halfpage
5
MRA990
handbook, P halfpage
35 30 25
MRA427
ID (A)
tot (W)
(1)
(2)
(2)
1
20
(1)
15 10 5 0.1 0 0
1
10
VDS (V)
100
20
40
60
80
100 120 Th (oC)
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 12.5 V ±VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 0.7 A; VDS = 10 V ID = 0.7 A; VGS = 15 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz MIN. 40 − − 2 200 − − − − −
BLF522
TYP. MAX. UNIT − − − − 270 1.8 2.3 14 17 3 − 0.5 1 4.5 − 2.7 − − − − V mA µA V mS Ω A pF pF pF
handbook, halfpage
25
MRA254
handbook, halfpage
3
MRA249
T.C. (mV/K)
ID (A) 2
15
5
1
−5 10
0 102 103 ID(mA) 104
0
4
8
12
16 20 VGS (V)
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
handbook, halfpage
5
MRA253
MRA246
RDSon (Ω) 4
handbook, halfpage
50
C (pF) 40
3
30
2
20
Cos
1
10
Cis
0
0
50
100
Tj (oC)
150
0
0
4
8
12 VDS (V)
16
ID = 0.7 A; VGS = 15 V;
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
10
MRA256
Crs (pF)
8
6
4
2
0 0 4 8 12 VDS (V) 16
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 IDQ (mA) 50 PL (W) 5 Gp (dB) > 10 typ. 11
BLF522
ηD (%) > 50 typ..