BLF521

DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation. 4 g MBB072 BLF521 PIN CONFIGURATION ook, halfpage 1 2 3 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 gate drain source DESCRIPTION source Top view MSB007 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tamb = 25 ...