JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMPSH-3 SCHOTTKY BARRIER DIODE
SO...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMPSH-3
SCHOTTKY BARRIER DIODE
SOT-23
FEATURES High Switching Speed Low Forward Voltage
MARKING: D95
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
IO Continuous Forward Current IFRM Peak Repetitive Forward Current IFSM Non-repetitive Peak Forward Current @ tp=10ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature
Value
30
100 350 750 350 286 125 -55~+150
Unit
V
mA mA mA mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Forward voltage
Total capacitance Reverse recovery time
Symbol V(BR) IR
VF
Ctot trr
Test conditions IR=100μA VR=25V IF=2mA IF=15mA IF=100mA VR=1V,f=1MHz IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Min Typ Max 30
0.5 0.33 0.45
1 7 5
Unit V μA
V
pF ns
A,Sep,2010
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