BLF2047L

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L UHF power LDMOS transistor Product specification Supersedes data of 1999 Apr 01 1999 Dec 06 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation (1.8 to 2 GHz) Internal input and output matching for high gain and efficiency. handbook, halfpage BLF2047L PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 PL (W) 65 (PEP) Gp (dB) >10.5 ηD (%) >30 dim (dBc) ≤−25 Top view 2 3 MBK394 Fig.1 Simplified outline SOT502A. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electros...