BLF202

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. APPLICATIONS Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. handbook, halfpage BLF202 PINNING - SOT409A PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION 8 5 1 Top view 4 MBK150 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PL (W) 2 Gp (dB) >10 ηD (%) >50 1999 Oct 20 2 Philips Semiconductors Product specification HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb ≤ 85 °C CONDITIONS MIN. − − − − −65 − BLF202 MAX. 40 20 ...