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BLF1047 Dataheets PDF



Part Number BLF1047
Manufacturers NXP
Logo NXP
Description UHF power LDMOS transistor
Datasheet BLF1047 DatasheetBLF1047 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1047 PINNING - SOT541A PIN 1 2 3 drain gate source.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1047 PINNING - SOT541A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS • Communication transmitter applications in the UHF frequency range. 1 3 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION PL (W) 70 (PEP) 70 Gp (dB) >14 >14 Top view 2 MBK765 Fig.1 Simplified outline. ηD (%) >35 >45 dim (dBc) ≤−26 − This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 02 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature PARAMETER − − − −65 − MIN. BLF1047 MAX. 65 ±20 9 +150 200 V V A UNIT °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±20 V; VDS = 0 VDS = 10 V; ID = 5 A VGS = VGSth + 9 V; ID = 5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 − 20 − − − − − − TYP. − − − − − 3 200 75 65 2.5 MAX. − 5 10 − 250 − − − − − UNIT V V µA A nA S mΩ pF pF pF PARAMETER thermal resistance from junction to heatsink CONDITIONS Th = 25 °C, Pdis = 100 W; note 1 VALUE 1.15 UNIT K/W APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 PL (W) 70 (PEP) 70 Gp (dB) >14 >14 ηD (%) >35 >45 dim (dBc) ≤−26 − Ruggedness in class-AB operation The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. 2000 Feb 02 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads BLF1047 SOT541A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F 3 D1 U1 q C B c 1 H U2 p E1 E w1 M A M B M A 2 b 0 w2 M C M 5 scale 10 mm Q DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.74 4.60 0.226 0.181 b 11.05 10.80 c 0.18 0.10 D D1 E E1 F 1.78 1.52 H 20.83 19.81 p 3.43 3.18 0.135 0.125 Q 2.69 2.44 0.106 0.096 q 22.10 0.87 U1 27.31 27.05 1.075 1.065 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 15.39 15.39 15.09 15.09 0.606 0.606 0.594 0.594 10.26 10.29 10.06 10.03 0.404 0.405 0.396 0.395 0.435 0.007 0.425 0.004 0.070 0.820 0.060 0.780 OUTLINE VERSION SOT541A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-01-13 2000 Feb 02 4 Philips Semiconductors Preliminary specification UHF power LDMOS transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLF1047 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sect.


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