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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D390
BLF1047 UHF power LDMOS transistor
Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz).
handbook, halfpage
BLF1047
PINNING - SOT541A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
APPLICATIONS • Communication transmitter applications in the UHF frequency range.
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3
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION PL (W) 70 (PEP) 70 Gp (dB) >14 >14
Top view
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MBK765
Fig.1 Simplified outline.
ηD (%) >35 >45
dim (dBc) ≤−26 −
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02
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Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature PARAMETER − − − −65 − MIN.
BLF1047
MAX. 65 ±20 9 +150 200 V V A
UNIT
°C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±20 V; VDS = 0 VDS = 10 V; ID = 5 A VGS = VGSth + 9 V; ID = 5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 − 20 − − − − − − TYP. − − − − − 3 200 75 65 2.5 MAX. − 5 10 − 250 − − − − − UNIT V V µA A nA S mΩ pF pF pF PARAMETER thermal resistance from junction to heatsink CONDITIONS Th = 25 °C, Pdis = 100 W; note 1 VALUE 1.15 UNIT K/W
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 PL (W) 70 (PEP) 70 Gp (dB) >14 >14 ηD (%) >35 >45 dim (dBc) ≤−26 −
Ruggedness in class-AB operation The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power.
2000 Feb 02
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Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF1047
SOT541A
Package under development
Philips Semiconductors reserves the right to make changes without notice.
D
A F
3
D1
U1 q C
B c
1
H
U2
p
E1
E
w1 M A M B M A
2
b 0 w2 M C M 5 scale 10 mm Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.74 4.60 0.226 0.181 b 11.05 10.80 c 0.18 0.10 D D1 E E1 F 1.78 1.52 H 20.83 19.81 p 3.43 3.18 0.135 0.125 Q 2.69 2.44 0.106 0.096 q 22.10 0.87 U1 27.31 27.05 1.075 1.065 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
15.39 15.39 15.09 15.09 0.606 0.606 0.594 0.594
10.26 10.29 10.06 10.03 0.404 0.405 0.396 0.395
0.435 0.007 0.425 0.004
0.070 0.820 0.060 0.780
OUTLINE VERSION SOT541A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 00-01-13
2000 Feb 02
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Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF1047
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sect.