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MMDL770

Schottky Barrier Diode

Description

Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.).  Very Low Capacitance—1.0pF @20V.  Extremely Low minority carrier lifetime.  High reverse leakage—70V(min.) Pb Lead-free MMDL770 APPLICATIONS  For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking MMDL770...

GME

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