Document
BAT54AW
Schottky barrier diode
1 April 2023
Product data sheet
1. General description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Low forward voltage • Low capacitance
3. Applications
• Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
VR
reverse voltage
VF
forward voltage
IR
reverse current
Conditions
Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
800 mV
-
-
2
µA
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
3
A1, A2
common anode
Simplified outline
3
1
2
SC-70 (SOT323)
Graphic symbol
A1; A2
K1
K2
006aaa439
Nexperia
BAT54AW
Schottky barrier diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAT54AW
SC-70
Description
plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body
Version SOT323
7. Marking
Table 4. Marking codes Type number BAT54AW
[1] % = placeholder for manufacturing site code
Marking code[1] 42%
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VR
reverse voltage
Tj = 25 °C
IF
forward current
IFRM
repetitive peak forward tp ≤ 1 s; δ ≤ 0.5
current
IFSM
non-repetitive peak
tp < 10 ms; Tj(init) = 25 °C
forward current
Per device; one diode loaded
Ptot Tj Tamb Tstg
total power dissipation junction temperature ambient temperature storage temperature
Tamb ≤ 25 °C
Min
-
[1]
-
[2]
-
-
-55
-65
[1] Tj = 25 °C before surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max
30 200 300
600
200 150 150 150
Unit
V mA mA
mA
mW °C °C °C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per device; one diode loaded
Rth(j-a)
thermal resistance from in free air
[1]
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Min Typ Max Unit
-
-
625 K/W
BAT54AW
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 April 2023
© Nexperia B.V. 2023. All rights reserved
2/8
Nexperia
BAT54AW
Schottky barrier diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Conditions
IF = 0.1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IF = 30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C
VR = 1 V; f = 1 MHz; Tamb = 25 °C
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
µA
-
-
10
pF
-
-
5
ns
103
IF (mA)
102
006aac829
(3) (1)
(2)
103
IR
(1)
(µA)
102 (2)
aaa-004515
10
10
(1) (2) (3) 1
1
(3)
10-1
0.0
0.4
0.8
1.2
VF (V)
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward voltage; typical values
10-1 0
10
20
30
VR (V)
(1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C
Fig. 2. Reverse current as a function of reverse voltage; typical values
BAT54AW
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 April 2023
© Nexperia B.V. 2023. All rights reserved
3/8
Nexperia
10
Cd (pF)
8
006aac891
6
4
2
Fig. 3.
0
0
10
20
30
VR (V)
Tamb = 25 °C; f = 1 MHz
Diode capacitance as a function of reverse voltage; typical values
11. Test information
tr
tp
RS = 50 Ω V = VR + IF × RS
D.U.T. IF
SAMPLING OSCILLOSCOPE
Ri = 50 Ω
10 %
VR
90 %
mga881
input signal
(1) IR = 1 mA
Fig. 4. Reverse recovery time test circuit and waveforms
12. Package outline
2.2 1.35 2.0 1.15
2.2 1.8
3
1.1 0.8 0.45 0.15
BAT54AW
Schottky barrier diode
t + IF
trr t
(1)
output signal
1
1.3 Dimensions in mm
Fig. 5. Package outline SC-70 (SOT323)
2 0.4 0.3
0.25 0.10
04-11-04
BAT54AW
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 April 2023
© Nexperia B.V. 2023. All rights reserved
4/8
Nexperia
13. Soldering
2.65 1.85
1.325
2.35
0.6 (3×)
2 3
1
1.3
0.5 (3×)
0.55 (3×)
Fig. 6. Reflow s.