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BAT54AW Dataheets PDF



Part Number BAT54AW
Manufacturers NXP
Logo NXP
Description Schottky barrier diodes
Datasheet BAT54AW DatasheetBAT54AW Datasheet (PDF)

BAT54AW Schottky barrier diode 1 April 2023 Product data sheet 1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Sy.

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BAT54AW Schottky barrier diode 1 April 2023 Product data sheet 1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage VF forward voltage IR reverse current Conditions Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C Min Typ Max Unit - - 30 V - - 800 mV - - 2 µA 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 A1, A2 common anode Simplified outline 3 1 2 SC-70 (SOT323) Graphic symbol A1; A2 K1 K2 006aaa439 Nexperia BAT54AW Schottky barrier diode 6. Ordering information Table 3. Ordering information Type number Package Name BAT54AW SC-70 Description plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Version SOT323 7. Marking Table 4. Marking codes Type number BAT54AW [1] % = placeholder for manufacturing site code Marking code[1] 42% 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per diode VR reverse voltage Tj = 25 °C IF forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.5 current IFSM non-repetitive peak tp < 10 ms; Tj(init) = 25 °C forward current Per device; one diode loaded Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C Min - [1] - [2] - - -55 -65 [1] Tj = 25 °C before surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Max 30 200 300 600 200 150 150 150 Unit V mA mA mA mW °C °C °C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Per device; one diode loaded Rth(j-a) thermal resistance from in free air [1] junction to ambient [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Min Typ Max Unit - - 625 K/W BAT54AW Product data sheet All information provided in this document is subject to legal disclaimers. 1 April 2023 © Nexperia B.V. 2023. All rights reserved 2/8 Nexperia BAT54AW Schottky barrier diode 10. Characteristics Table 7. Characteristics Symbol Parameter Per diode VF forward voltage IR reverse current Cd diode capacitance trr reverse recovery time Conditions IF = 0.1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IF = 30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C VR = 1 V; f = 1 MHz; Tamb = 25 °C IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 240 mV - - 320 mV - - 400 mV - - 500 mV - - 800 mV - - 2 µA - - 10 pF - - 5 ns 103 IF (mA) 102 006aac829 (3) (1) (2) 103 IR (1) (µA) 102 (2) aaa-004515 10 10 (1) (2) (3) 1 1 (3) 10-1 0.0 0.4 0.8 1.2 VF (V) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Forward current as a function of forward voltage; typical values 10-1 0 10 20 30 VR (V) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 2. Reverse current as a function of reverse voltage; typical values BAT54AW Product data sheet All information provided in this document is subject to legal disclaimers. 1 April 2023 © Nexperia B.V. 2023. All rights reserved 3/8 Nexperia 10 Cd (pF) 8 006aac891 6 4 2 Fig. 3. 0 0 10 20 30 VR (V) Tamb = 25 °C; f = 1 MHz Diode capacitance as a function of reverse voltage; typical values 11. Test information tr tp RS = 50 Ω V = VR + IF × RS D.U.T. IF SAMPLING OSCILLOSCOPE Ri = 50 Ω 10 % VR 90 % mga881 input signal (1) IR = 1 mA Fig. 4. Reverse recovery time test circuit and waveforms 12. Package outline 2.2 1.35 2.0 1.15 2.2 1.8 3 1.1 0.8 0.45 0.15 BAT54AW Schottky barrier diode t + IF trr t (1) output signal 1 1.3 Dimensions in mm Fig. 5. Package outline SC-70 (SOT323) 2 0.4 0.3 0.25 0.10 04-11-04 BAT54AW Product data sheet All information provided in this document is subject to legal disclaimers. 1 April 2023 © Nexperia B.V. 2023. All rights reserved 4/8 Nexperia 13. Soldering 2.65 1.85 1.325 2.35 0.6 (3×) 2 3 1 1.3 0.5 (3×) 0.55 (3×) Fig. 6. Reflow s.


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