Document
New Product
MBR(F,B)30H90CT & MBR(F,B)30H100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR30H90CT
MBR30H100CT
PIN 1
PIN 2
PIN 3
CASE
3 2 1
TO-263AB K
123 MBRF30H90CT
MBRF30H100CT
PIN 1
PIN 2
PIN 3
2
1
MBRB30H90CT
MBRB30H100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF IR TJ max.
15 A x 2 90 V, 100 V
275 A 0.67 V 5.0 µA 175 °C
FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package) • Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS For use in high frequency rectifier of switchi.