Linear Integrated Systems
LS421, LS422, LS423, LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET...
Linear Integrated Systems
LS421, LS422, LS423, LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
HIGH INPUT IMPEDANCE HIGH GAIN
IG=0.25pA MAX gfs=120µmho MIN
LOW POWER OPERATION
VGS(off)=2V MAX
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65° to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each
Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source
-VDSO
Drain to Source Voltage
-IG(f)
Gate Forward Current
Maximum Power Dissipation
40V 40V 10mA
Device Dissipation @ Free Air - Total
400mW @ +125°C
S1 G2
D1 D2
G1 S2 22 X 20 MILS
C
G1 4 3
S2 5
D1 2
6 D2
17 S1 G2
TO-78 BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
|∆VGS1-2 /∆T| max. Drift vs. Temperature 10
|VGS1-2| max.
Offset Voltage GATE VOLTAGE
10
25 40 10 15 2...
