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BGY1816 Dataheets PDF



Part Number BGY1816
Manufacturers NXP
Logo NXP
Description UHF amplifier
Datasheet BGY1816 DatasheetBGY1816 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1816 UHF amplifier module Product specification Supersedes data of 1998 Apr 09 1998 May 27 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤63 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1880 MHz frequency band. DESCRIPTION The BGY1816 is a three-stage UHF amplifier module .

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1816 UHF amplifier module Product specification Supersedes data of 1998 Apr 09 1998 May 27 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤63 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1880 MHz frequency band. DESCRIPTION The BGY1816 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate. handbook, halfpage BGY1816 PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION 1 2 3 4 MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1805 to 1880 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥24 η (%) ≥30 ZS; ZL (Ω) 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS − − − −30 −10 MIN. 4.5 MAX. 5.5 28 120 20 +100 +90 V V mW W °C °C UNIT 1998 May 27 2 Philips Semiconductors Product specification UHF amplifier module CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise specified. SYMBOL f IS1 IS2 PL Gp η H2 H3 VSWRin PARAMETER frequency supply current supply current load power power gain efficiency second harmonic third harmonic input VSWR stability reverse intermodulation B AM bandwidth ruggedness VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 = 25 to 27 V Pcarrier = 16 W; Preverse = −40 dBc; fi = fc ±200 kHz corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR ≤ 5 : 1 through all phases PD < −60 dBm PD < 63 mW CONDITIONS − − 16 24 30 − − − − − 2 MIN. 1805 − 80 430 − − − − − − − − − TYP. − − − BGY1816 MAX. 1880 UNIT MHz mA mA W dB % dBc dBc dBc dBc MHz 28 − −35 −40 1.6 : 1 −60 −53 − no degradation MGD187 MGD186 handbook, halfpage 30 60 Gp η (%) handbook, halfpage 30 Gp (dB) PL (W) 20 η 40 20 10 20 10 0 0 10 20 PL (W) 0 30 0 0 40 80 PIN (mW) 120 f = 1850 MHz; VS1 = 5 V; VS2 = 26 V; ZS = ZL = 50 Ω; Tmb = 25 °C. f = 1850 MHz; VS1 = 5 V; VS2 = 26 V; ZS = ZL = 50 Ω; Tmb = 25 °C. Fig.2 Power gain and efficiency as functions of load power; typical values. Fig.3 Load power as a function of input power; typical values. 1998 May 27 3 Philips Semiconductors Product specification UHF amplifier module APPLICATION INFORMATION BGY1816 handbook, full pagewidth C7 C5 C8 C6 Z1 R1 L1 R2 L2 Z2 C3 C1 C4 C2 input VS1 VS2 MGM861 output Fig.4 Test circuit. List of components (see Figs 4 and 5) COMPONENT C1, C2 C3, C4 C5, C6 C7, C8 L1, L2 R1, R2 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm. DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Grade 4S2 Ferroxcube bead metal film resistor stripline: note 1 10 Ω; 0.4 W 50 Ω VALUE 10 µF; 35 V 10 nF; 50 V 100 pF; 50 V 10 pF; 50 V 4330 030 36300 2322 195 13109 CATALOGUE NO. 1998 May 27 4 Philips Semiconductors Product specification UHF amplifier module BGY1816 handbook, full pagewidth 90 42 C7 C5 C8 C6 R1 L1 L2 R2 Z2 C3 C4 Z1 C1 C2 output VS1 VS2 input MGM862 Dimensions in mm. Fig.5 Printed-circuit board component layout. 1998 May 27 5 Philips Semiconductors Product specification UHF amplifier module MOUNTING RECOMMENDATIONS BGY1816 To ensure a good thermal contact and to prevent mechanical stress when bolted down, the flatness of the mounting base is designed to be typically better than 0.1 mm. The mounting area of the heatsink should be flat and free from burrs and loose particles. The heatsink should be rigid and not prone to bowing under thermal cycling conditions. The thickness of a solid heatsink should be not less than 5 mm to ensure a rigid assembly. A thin, even layer of thermal compound should be applied between the mounting base and the heatsink to achieve the best possible thermal contact resistance. Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting base; too little will also result in poor thermal conduction. The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be tightened to “finger tight” and then further tightened in alternating steps to a maximum torque of 0.4 to 0.6 Nm. Once mounted on the heatsink, the module leads can be soldered to the printed-circuit board. A soldering iron may be used up to a temperature of 250 °C for a maximum of 10 seconds at a distance o.


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