BGY120B

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D373 BGY120A; BGY120B UHF amplifier modules Objective specification 1997 Nov 11 Philips Semiconductors Objective specification UHF amplifier modules FEATURES Single 3.5 V nominal supply voltage 1 W output power Easy control of output power by DC voltage Very high efficiency (typ. 60%) Silicon bipolar technology Standby current less than 10 µA. APPLICATIONS Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY120A and BGY120B are two-stage UHF amplifier modules in a SOT482B package with plastic cover. Each module consists of two NPN silicon planar transistor dies mounted together with a matching and bias circuit components on a metallized ceramic substrate. These modules produce an output power of 1 W into a load of 50 Ω with an RF drive power of 5 mW. PINNING - SOT482B PIN 1 2 3 4 5 BGY120A; BGY120B DESCRIPTION RF input VC VS RF output flange connected to ground handbook, halfpage 5 4 3 2 1 MBK201 Bottom view Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE BGY120A BGY120B MODE OF OPERATION CW CW f (MHz) 824 to 849 872 to 905 VS (V) 3.5 3.5 PL (W) 1 1 Gp (dB) ≥23 ≥23 η (%) typ. 60 typ. 60 ZS; ZL (Ω) 50 50 1997 Nov 11 2 Philips Semiconductors Objective specification UHF amplifier modules LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tm...