BGX50A

Silicon Switching Diode Array q q BGX 50 A Bridge configuration High-speed switch diode chip Type BGX 50 A Marking U1s Ordering Code (tape and reel) Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF Ptot Tj Tstg Values 50 70 140 210 150 – 65 … + 150 Unit V mA mW ˚C 640 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BGX 50 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Forward voltage per diode IF = 100 mA Reverse current per diode VR = 50 V VR = 50 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 1.5 6 pF ns VF IR – – – – 0.2 100 – – 1.3 V µA Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BGX 50 A Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (...