BGD812

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 CATV amplifier module Preliminary specification Supersedes data of 1999 Dec 01 2000 Apr 26 Philips Semiconductors Preliminary specification CATV amplifier module FEATURES Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). Side view MSA319 BGD812 PINNING - SOT115J PIN 1 2 and 3 5 7 and 8 9 input common +VB common output DESCRIPTION handbook, halfpage 1 2 3 5 7 8 9 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 18.2 19 380 MAX. 18.8 20 410 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 30 70 +100 +100 V dBmV °C °C UNIT 2000 Apr 26 2 Philips Semiconductors Preliminary specification CATV amplifier module CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to ...