BGD714

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors 750 MHz, 20.3 dB gain power doubler amplifier Product specification BGD714 FEATURES  Excellent linearity  Extremely low noise  Excellent return loss properties  Silicon nitride passivation  Rugged construction  Gold metallization ensures excellent reliability. PINNING - SOT115J PIN DESCRIPTION 1 input 2, 3 common 5 +VB 7, 8 common 9 output APPLICATIONS  CATV systems operating in the 40 to 750 MHz frequency range. handbook, halfpage 123 5 789 DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER Gp power gain Itot total current consumption (DC) CONDITIONS f = 45 MHz f = 750 MHz VB = 24 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb PARAMETER supply voltage RF input voltage storage temperature operating mounting base temperature MIN. 20 20.8 380 MAX. 20.6 21.8 410 UNIT dB dB mA MIN.   40 20 MAX. 30 70 +100 +100 UNIT V dBmV C C 2001 Nov 02 2 NXP Semiconductors 750 MHz, 20.3 dB gain power doubler amplifier Product specification BGD714 CHARACTERISTICS Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75  SYMBOL PARAMETER CONDITIO...