BGA420

BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz 4 IP3out = +13 dBm at 1.8 GHz (VD = 3 V, ID = typ. 6.7 mA)
Noise figure NF = 2.3 dB at 1.8 GHz
Reverse isolation > 28 dB and 2 1 VD 4 VPS05605 return loss IN / OUT > 12 dB at 1.8 GHz 3 OUT Circuit Diagram IN 1 2 GND EHA07385 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA420 Maximum Ratings Parameter Device current Device voltage Marking BLs 1, IN Pin Configuration 2, GND 3, OUT 4, VD Package SOT343 Symbol ID VD Ptot PRFin Tj TA Tstg Value 15 6 90 0 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Total power dissipation TS = 110 °C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS
410 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-29-2002 BGA420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics VD = 3 V, Zo = 50  Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical biasing configuration ID |S21|2 17 15 11 25 19 17 13 28 5.4 6.7 8 mA dB Symbol min. Values typ. max. Unit S12...