BGA2712

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2712 MMIC wideband amplifier Product specification Supersedes data of 2002 Jan 31 2002 Sep 10 Philips Semiconductors Product specification MMIC wideband amplifier FEATURES Internally matched to 50 Ω Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness) 5 dBm saturated output power at 1 GHz Good linearity (11 dBm IP3(out) at 1 GHz) Unconditionally stable (K > 1.5). APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CONDITIONS 5 12.3 21.3 3.9 4.8 TYP. 6 − − − − 1 Top view Marking code: E2-. 6 BGA2712 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 2 3 MAM455 4 2, 5 Fig.1 Simplified outline (SOT363) and symbol. MAX. UNIT V mA dB dB dBm LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power CAUTION This product is supplied in anti-static packing to prevent damage caused by electro...