BGA2012

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Product specification Supersedes data of 2000 Sep 06 2000 Dec 04 Philips Semiconductors Product specification 1900 MHz high linear low noise amplifier FEATURES Low current, low voltage High linearity High power gain Low noise Integrated temperature compensated biasing Control pin for adjustment bias current. APPLICATIONS RF front end Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. handbook, halfpage BGA2012 PINNING PIN 1 2 3 4 5, 6 RF in VC VS RF out GND DESCRIPTION VS 5 4 6 RF out VC 1 2 3 MBL251 BIAS CIRCUIT Top view Marking code: A6- RF in GND Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL VS IS IC |s21|2 NF PARAMETER DC supply voltage DC supply current DC control current insertion power gain noise figure VC = VS in application circuit, see Fig.2; f = 1900 MHz IS = 7 mA; f = 1900 MHz CONDITIONS RF input AC coupled 3 7.5 0.11 16 1.7 TYP. − − − − MAX. 4.5 UNIT V mA mA dB dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS VC IS IC Ptot Tstg Tj PARAMETER DC supply voltage voltage on control pin supply current control current total power dissipation storage t...