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BG3230R

Infineon Technologies AG
Part Number BG3230R
Manufacturer Infineon Technologies AG
Description DUAL N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BG3230_BG3230R DUAL N-Channel MOSFET Tetrode 4 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with ...
Datasheet PDF File BG3230R PDF File

BG3230R
BG3230R

Overview
BG3230_BG3230R DUAL N-Channel MOSFET Tetrode 4 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package • Integrated stabilized bias network • Integrated gate protection diodes • High gain, low noise figure • Improved cross modulation at gain reduction • High AGC-range BG3230 6 5 4 2 1 3 VPS05604 BG3230R 6 5 4 Drain AGC HF Input G2 G1 HF Output + DC B A B 2 3 1 1 A GND 2 3 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3230 BG3230R SOT363 SOT363 1=G1 1=G1 2=G2 2=S 3=D 3=D 4=D 4=D 5=S 5=G2 6=G1 6=G1 KBs KIs 180° rotate...


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