DUAL N-Channel MOSFET Tetrode
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL)
• Two AGC ampli...
Description
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL)
Two AGC amplifiers in one single package Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101
BG3130...
4
5 6
3 2
1
BG3130 BG3130R
$#
* )
" !
AGC
RF Input RG1
G2 G1
VGG
GND
Drain
RF Output + DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BG3130 BG3130R
Package SOT363 SOT363
Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D** 5=G2
Marking 6=G1** KAs 6=G1** KHs
* For amp. A; ** for amp. B 180° rotated tape loading orientation available
1 2007-06-01
BG3130...
Maximum Ratings
Parameter
Symbol
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature
VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch
Thermal Resistance
Parameter
Symbol
Channel - soldering point1)
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value 8 25 1 6 200
-55 ... 150 150
Value ≤ 280
Unit V mA
V mW °C
Unit K/W
2 2007-06-01
BG3130...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-so...
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