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BFY90 Dataheets PDF



Part Number BFY90
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet BFY90 DatasheetBFY90 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low no.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1310.PDF 10-25-99 BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 Value Typ. Max. 10 Unit Vdc nA (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 20 125 - DYNAMIC Symbol fT NFmin Cibo Test Conditions Min. Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2.5 5.0 2.0 dB pF 1.3 Value Typ. Max. Unit GHz MSC1310.PDF 10-25-99 BFY90 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Stable Gain Insertion Gain IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz Value Typ. 20 22 16 Max. Unit dB dB dB G U max 15 MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .574 .374 .292 .259 .221 .198 .185 .187 .185 .177 ∠φ -79 -130 -172 142 96 53 8.8 -38 -91 -136 S21 |S21| 10.65 7.01 4.44 3.62 3.02 2.57 2.08 1.90 1.79 1.70 ∠φ 127 105 97 92 88 80 76 76 72 61 S12 |S12| .023 .036 .047 .063 .072 .082 .087 .104 .117 .118 ∠φ 67 60 66 63 60 58 58 58 50 44 S22 |S22| .788 .682 .654 .640 .617 .614 .611 .621 .620 .632 ∠φ -56 -97 -136 -178 140 98 55 10 -35 -78 MSC1310.PDF 10-25-99 BFY90 MSC1310.PDF 10-25-99 .


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