BFY51

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 35 V). APPLICATIONS General purpose industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 BFY50; BFY51; BFY52 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 ICM Ptot hFE peak collector current total power dissipation DC current gain BFY50 BFY51 BFY52 fT transition frequency BFY50 BFY51; BFY52 IC = 50 mA; VCE = 10 V; f = 100 MHz 60 50 − − − − MHz MHz Tamb ≤ 25 °C Tcase ≤ 100 °C IC = 150 mA; VCE = 10 V 30 40 60 112 123 142 − − − open base − − − − − − − − − − − − 35 30 20 1 800 2.86 V V V A mW W open emitter − − − − − − 80 60 40 V V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Apr 22 2 Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 VEBO IC ICM IBM Ptot emitter-base voltage collector current...