BFY193

BFY193 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY193 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration 1 C 2 E 3 B 4 E Micro-X1 Package P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702F1610 on request on request Q62702F1701 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY193 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 104°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Rth JS < 165 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Charact...