BFY181 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain bro...
BFY181 HiRel
NPN Silicon RF
Transistor
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 03
4
3
1
2
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY181 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration C E B E Package Micro-X1
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702F1607 on request on request Q62702F1715
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99
BFY181
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 137°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance
Junction-soldering point
3)
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg
Rth JS
Values 12 20 20 2 20 2
1)
Unit V V V V mA mA mW °C °C °C
K/W
175 200 -65...+200 -65...+200
< 360
Notes.: 1) The maximum permissible base current for VFBE measurements is 15mA (spotmeasurement duration < 1s) 2) At TS = + 137 °C. For TS > + 137 °C derating is required. 3) TS is measured ...
