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BFX30 Dataheets PDF



Part Number BFX30
Manufacturers NXP
Logo NXP
Description PNP switching transistor
Datasheet BFX30 DatasheetBFX30 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max.600 mA) • Low voltage (max. 65 V). APPLICATIONS • Switching applications. DESCRIPTION PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BFX30 DESCRIPTION collector, connected to case 1 hand.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max.600 mA) • Low voltage (max. 65 V). APPLICATIONS • Switching applications. DESCRIPTION PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BFX30 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −10 mA; VCE = −400 mV IC = −50 mA; VCE = −10 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 10 mA open emitter open base CONDITIONS MIN. − − − − 50 100 − TYP. − − − − 90 − − MAX. −65 −65 −600 600 200 − 300 MHz ns UNIT V V mA mW 1997 Apr 16 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. BFX30 MAX. −65 −65 −5 −600 −600 −200 600 +150 200 +150 V V V UNIT mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 300 UNIT K/W 1997 Apr 16 3 Philips Semiconductors Product specification PNP switching transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = −65 V IE = 0; VCB = −50 V IE = 0; VCB = −50 V; Tj = 100 °C IEBO hFE emitter cut-off current DC current gain IC = 0; VEB = −5 V IC = 0; VEB = −3 V IC = −1 mA; VCE = −400 mV IC = −10 mA; VCE = −400 mV IC = −50 mA; VCE = −400 mV IC = −150 mA; VCE = −400 mV VCEsat VBEsat Cc Ce fT ton td tr toff ts tf collector-emitter saturation voltage IC = −150 mA; IB = −15 µA base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = −30 mA; IB = −1 mA IC = −150 mA; IB = −15 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −2 V; f = 1 MHz MIN. − − − − − 40 50 20 10 − − − − − BFX30 TYP. MAX. UNIT − − − − − − 90 − − − − − 6 18 − − − − − − − −500 −50 −2 −500 −100 − 200 − − −400 −900 −1.3 − − − mV mV V pF pF MHz nA nA µA nA nA IC = −50 mA; VCE = −10 V; f = 100 MHz 100 ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − − − − − − Switching Times (between 10% and 90% levels); see Fig.2 turn-on time delay time rise time turn-off time storage time fall time 45 15 35 300 250 50 ns ns ns ns ns ns handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MGD624 VCC = −29.5 V; VBB = 3.5 V; Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Apr 16 4 Philips Semiconductors Product specification PNP switching transistor PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BFX30 SOT5/11 j B α seating plane w M A M B M 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 Apr 16 5 Philips Semiconductors Product specification PNP switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFX30 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appl.


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