DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BFV420 NPN high-voltage transistor
Product specification Supe...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BFV420
NPN high-voltage
transistor
Product specification Supersedes data of 1997 Apr 22 1999 Apr 23
Philips Semiconductors
Product specification
NPN high-voltage
transistor
FEATURES Low current (max. 100 mA) High voltage (max. 100 V). APPLICATIONS Primarily intended for video applications (monitors). DESCRIPTION
NPN high-voltage
transistor in a TO-92; SOT54 plastic package.
PNP complement: BFV421.
1 handbook, halfpage
BFV420
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
2 3
2 1 3
MAM259
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector MIN. − − − − − − − −65 − −65 MAX. 140 100 5 100 100 100 830 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN high-voltage
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE V...