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B5818WS

GME

Schottky Barrier Diode

Production specification Schottky Barrier Diode FEATURES  Extremely low VF .  Low stored change,majority carrier cond...


GME

B5818WS

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Description
Production specification Schottky Barrier Diode FEATURES  Extremely low VF .  Low stored change,majority carrier conduction  Low power loss/high efficient.  MSL 1. APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters.  Free Wheeling, And Polarity Protection Applications. B5818WS-B5819WS SOD-323 ORDERING INFORMATION Type No. Marking B5818WS B5819WS SK SL Package Code SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818WS Non-Repetitive Peak reverse voltage VRM 36 B5819WS 48 Unit V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM 30 40 V VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) 21 28 Io 1 IFSM 10 Pd 235 RθJA 80 TJ,TSTG -65 to +150 V A A mW ℃/W ℃ B009 Rev.A www.gmesemi.co...




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