BFT 92W
PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary...
BFT 92W
PNP Silicon RF
Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92W (
NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 92W W1s Q62702-F1681 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 2 25 3 mW 200 150 - 65 ... + 150 - 65 ... + 150 ≤ 225 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 105 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFT 92W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 50 -
V nA 100 µA 10 15 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFT 92W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 0.58 0.3 0.77 -
GHz pF 0.9 dB 2 3.2 -
IC = 15 mA, VCE = 8 V...
