BFT92
PNP 5 GHz wideband transistor
Rev. 3 — 22 January 2016
Product data sheet
1. Product profile
1.1 General descri...
BFT92
PNP 5 GHz wideband
transistor
Rev. 3 — 22 January 2016
Product data sheet
1. Product profile
1.1 General description
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The
transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
NPN complements are BFR92 and BFR92A.
1.2 Features and benefits
High power gain Low intermodulation distortion
1.3 Applications
Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers
1.4 Quick reference data
Table 1. Symbol VCBO VCEO IC Ptot fT Cre GUM
NF
Quick reference data Parameter collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure
dim
intermodulation distortion
Conditions open emitter open base
up to Ts = 95 C IC = 14 mA; VCE = 10 V; f = 500 MHz IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz Tamb = 25 C; IC = 5 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; RL = 75 ; Vo = 150 mV; Tamb = 25 C; f(p + q-r) = 493.25 MHz
[1] Ts is the temperature at the soldering point of the collector tab.
Min Typ Max Unit
- - 20 V
- - 15 V
- - 25 mA
[1] -
-
30...