BFT45

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFT45 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 18 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES Low current (max. 500 mA) High voltage (max. 250 V). APPLICATIONS High voltage switching and amplification Industrial and telephone applications. 1 handbook, halfpage 2 BFT45 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cc fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain collector capacitance transition frequency Tcase ≤ 50 °C IC = −10 mA; VCE = −10 V IE = ie = 0; VCE = −20 V; f = 1 MHz IC = −15 mA; VCE = −10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 50 − − MIN. − − − − − − 70 TYP. MAX. −250 −250 −1 5 150 15 − pF MHz UNIT V V A W 1997 Apr 18 2 Philips Semiconductors Product specification PNP high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissi...