Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA ...
Low Noise Silicon Bipolar RF
Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Two (galvanic) internal isolated
Transistor in
one package For orientation in reel see package
information below Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
BFS483
4
5 6
3 2
1
C1 E2 B2 654
TR2
TR1
123
B1 E1 C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS483
Marking
Pin Configuration
Package
RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363
1 2013-07-25
BFS483
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 40 °C Junction temperature Ambient temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TA TStg
Value 12 20 20 2 65 5 450
150 -65 ... 150 -65 ... 150
Unit V
mA mW °C
Thermal Resistance Parameter Junction - soldering point2)
Symbol RthJS
Value 245
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff cur...
