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SD101CL

GME

Schottky Barrier Diode

Production specification Schottky Barrier Diode FEATURES  Low Forward Voltage Drop.  Guard Ring Construction For Tran...


GME

SD101CL

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Description
Production specification Schottky Barrier Diode FEATURES  Low Forward Voltage Drop.  Guard Ring Construction For Transient Protection.  Negligible Reverse Recovery Time. SD101AL/SD101BL/SD101CL Pb Lead-free APPLICATIONS  Schotty barrier switching. DFN1006-2 ORDERING INFORMATION Type No. Marking SD101AL SD101BL SD101CL S1 S2 S3 Package Code DFN1006-2 DFN1006-2 DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD101AL SD101BL Peak Repetitive Peak reverse voltage Working Peak DC Reverse Voltage RMS Reverse Voltage Forward Continuous Current VRR VRWM VR VR(RMS) IFM 60 42 15 50 35 Repetitive Peak Forward Current @t<1.0s @t=10μs IFRM 50 2.0 Power Dissipation Thermal Resistance Junction to Ambient Storage temperature Pd RθjA Tstg 200 300 -65 to +125 SD101CL 40 28 Unit V V mA mA A mW ℃/W ℃ Q014 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode SD101AL/SD101BL/SD101CL ELECTRICAL CHARACTERISTICS @...




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