RB751CS-40
Silicon Epitaxial Planar Schottky Barrier Diode
Features • Small surface mounting type • Low forward voltage ...
RB751CS-40
Silicon Epitaxial Planar
Schottky Barrier Diode
Features Small surface mounting type Low forward voltage High reliability
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
1 52
Transparent top view Marking Code: 5 Simplified outline DFN1006-2B and symbol
Absolute Maximum Ratings (Ta = 25℃) Parameter
Peak Reverse Voltage Reverse Voltage Average rectified forward current
HPeak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
CStorage Temperature Range ECharacteristics at Ta = 25℃
Parameter
TForward Voltage
at IF = 1 mA Reverse Current
Mat VR= 30 V
Capacitance Between Terminals
SEat VR= 1 V, f = 1 MHz
Symbol VRM VR IF(AV) IFSM Tj Tstg
Value 40 30 30 200 125
- 40 to + 125
Unit V V mA mA ℃ ℃
Symbol VF IR CT
Typ. 2
Max. 0.37 0.5
-
Unit V µA pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited ®
Dated: 02/07/2013 Rev: 02
RB751CS-40
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
DFN1006-2B
EMTECHUNIT A A...
