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RB521L-30

GME

Schottky Barrier Diode

Schottky Barrier Diode FEATURES  Low VF.  Extremely small mounting type.  Small surface mounting. Pb Lead-free Prod...


GME

RB521L-30

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Description
Schottky Barrier Diode FEATURES  Low VF.  Extremely small mounting type.  Small surface mounting. Pb Lead-free Production specification RB521L-30 APPLICATIONS  Low current rectification and high speed switching. ORDERING INFORMATION Type No. Marking RB521L-30 C DFN1006-2 Package Code DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Total device dissipation Junction temperature storage temperature VR 30 IO 200 IFSM 1 PT 200 Tj +125 Tstg -40 to +125 Unit V mA A mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF IR 0.50 V 30 μA IF=200mA VR=10V Q017 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode RB521L-30 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Q017 Rev.A www.gmesemi.com 2 DB Sch...




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