BFS19

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS19 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES Low current (max. 30 mA) Low voltage (max. 20 V). APPLICATIONS Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. 1 BFS19 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 MARKING TYPE NUMBER BFS19 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) F2∗ Top view 1 2 MAM255 2 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. 30 20 5 30 30 250 +150 150 +150 V V V mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN medium frequency transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTI...