BFS17W

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors NPN 1 GHz wideband transistor Product specification BFS17W APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, 2 columns 3 1 Top view 2 MBC870 Marking code: E1 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE fT Cc Cre Tj collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency collector capacitance feedback capacitance junction temperature up to Ts = 118 C; note 1 IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 5 V IE = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 1 MHz Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature open emitter open base open collector Ts = 118 C; note 1 Note 1. Ts is the temperature at the soldering point of th...