BFS17A

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage BFS17A 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tuners. 1 2 MSB003 PINNING PIN 1 2 3 base emitter collector DESCRIPTION Marking code: E2p. Top view Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT GUM F VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency maximum unilateral power gain noise figure output voltage up to Ts = 70 °C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz open base CONDITIONS open emitter − − − − 2.8 13.5 2.5 150 TYP. MAX. 25 15 25 300 − − − − V V mA mW GHz dB dB mV UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature up to Ts = 70 °C; note 1 open base open collector CONDITIONS open emitter − − − ...