BFR949L3
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector curren...
BFR949L3
NPN Silicon RF
Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
3 1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949L3
Maximum Ratings Parameter
Marking RK
1=B
Pin Configuration 2=E 3=C
Package TSLP-3-1
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 100°C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
tbd
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-09-2001
BFR949L3
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 10 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR949L3
Electrical Characteristics at TA = 25°C, unless otherwise specified. Param...