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BFR92A

Diodes Incorporated

NPN WIDEBAND TRANSISTOR

BFR92A NPN WIDEBAND TRANSISTOR Features · · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermo...


Diodes Incorporated

BFR92A

File Download Download BFR92A Datasheet


Description
BFR92A NPN WIDEBAND TRANSISTOR Features · · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise B E D G H K J L M SOT-23 A C TOP VIEW E B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: +P2 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC @ TA = 60°C Pd RqJA Tj, TSTG BRF92A 20 15 2.0 30 200 450 -65 to +150 Unit V V V mA mW K/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm2 area. DS30031 Rev. B-5 1 of 5 BFR92A Electrical DC Characteristics Characteristic DC Current Gain Collector - Emitter Cutoff Current Collector - Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage @ TA = 25°C unless otherwise specified Symbol hFE ICES ICBO V(BR)CBO V(BR)CEO V(BR)EBO Min 65 ¾ ¾ 20 15 2.0 Typ ¾ ¾ ¾ ¾ ¾ ¾ Max 150 100 50 ¾ ¾ ¾ Unit ¾ mA nA V V V Test Condi...




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