BFR90A

BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu Symbol RthJA Value 300 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (6) BFR90A Electrical DC Characteristics Tj = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 15 V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 DC forward current transfer ratio VCE = 10 V, IC = 14 mA Symbol ICES ICBO IEBO V(BR)CEO hFE 15 50 100 150 Min. Typ. Max. 100 100 10 Unit mA nA mA V Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 M...