SOT23
BFR540
NPN 9 GHz wideband transistor
Rev. 6 — 13 September 2011
Product data sheet
1. Product profile
1.1 Gene...
SOT23
BFR540
NPN 9 GHz wideband
transistor
Rev. 6 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFR540 is an
NPN silicon planar epitaxial
transistor in a SOT23 plastic package.
1.2 Features and benefits
High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
1.3 Applications
RF front end wideband applications in the GHz range Analog and digital cellular telephones Cordless telephones (CT1, CT2, DECT, etc.) Radar detectors Satellite TV tuners (SATV) MATV/CATV amplifiers Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCBO VCES
collector-base voltage
collector-emitter voltage
open emitter RBE = 0
-
-
20
V
-
-
15
V
IC
collector current (DC)
-
-
120 mA
Ptot
total power dissipation Tsp 70 C
[1] -
-
500 mW
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100 120 250
Cre
feedback capacitance IC = ic = 0 A; VCB = 8 V;
-
0.6 -
pF
f = 1 MHz
fT
transition frequency IC = 40 mA; VCE = 8 V;
-
9
-
GHz
f = 1 GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; Tamb = 25 C
f = 900 MHz
-
14
-
dB
f = 2 GHz
-
7
-
dB
NXP Semiconductors
BFR540
NPN 9 GHz wideband
transistor
Table 1. Symbol s212
NF
Quick reference data …continued
Parameter
Conditions
insertion power gain
IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900...