BFR505T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − TYP. − − − − 120 9 17 1.2 PINNING PIN 1 2 3 base emitter collector Marking code: N0. BFR505T DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package. fpage 3 DESCRIPTION 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 15 18 150 250 − − 1.7 UNIT V V mA mW GHz dB dB IC = 5 mA; VCE = 6 V; f = 900 MHz; − Tamb = 25 °C IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCE VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering...