BFR380L3

Linear Low Noise Silicon Bipolar RF Transistor High current capability and low noise figure for wide dynamic range Collector design supports supply voltage up to 5V Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure 1.1 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available BFR380L3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380L3 Marking Pin Configuration FC 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 96°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 6 15 15 2 80 14 380 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 140 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-08-29 BFR380L3 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6 9 - Collector-emitter cutoff current VCE = 5 V, VBE = 0 VCE = 15 ...