BFR380F
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
wide dynamic range appl...
BFR380F
NPN Silicon RF
Transistor Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR380F
Maximum Ratings Parameter
Marking FCs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value
Package TSFP-3
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150
Value
V
mA mW °C
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction - soldering point2)
145
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jan-24-2003
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE 60 100 200 IEBO 1 µA ICBO 100 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit
2
Jan-24-2003
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise s...
