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AQV414E Dataheets PDF



Part Number AQV414E
Manufacturers Panasonic
Logo Panasonic
Description Photo MOS Relay
Datasheet AQV414E DatasheetAQV414E Datasheet (PDF)

GU-E PhotoMOS (AQV414E, AQV41❍EH)VDE (AQV412EH) (Standard type) TESTING VDE (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQV414E, AQV41❍EH) ;;;; 8.8 .346 6.4 .252 3.9 .154 8.8 .346 1 2 3 6.4 .252 3.6 .142 mm inch 6 5 4 2. This is the low-cost version PhotoMOS 1 Form B output type relay. Compared to the previous GU PhotoMOS 1 Form B type relay, the attainment of an econom.

  AQV414E   AQV414E


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GU-E PhotoMOS (AQV414E, AQV41❍EH)VDE (AQV412EH) (Standard type) TESTING VDE (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQV414E, AQV41❍EH) ;;;; 8.8 .346 6.4 .252 3.9 .154 8.8 .346 1 2 3 6.4 .252 3.6 .142 mm inch 6 5 4 2. This is the low-cost version PhotoMOS 1 Form B output type relay. Compared to the previous GU PhotoMOS 1 Form B type relay, the attainment of an economical price that is approximately 22% lower will further broaden its market. 3. Normally closed type (2 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have a low on-resistance.) This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insula.


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